symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r jl 35 40 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1.44 w power dissipation t a =25c p d 2 a t a =70c 5.8 pulsed drain current b 40 continuous drain current a t a =25c i d 6.9 drain-source voltage 30 v gate-source voltage 12 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units AO4800 dual n-channel enhancement mode field effect transistor july 2001 features v ds (v) = 30v i d = 6.9a r ds(on) < 27m ? (v gs = 10v) r ds(on) < 32m ? (v gs = 4.5v) r ds(on) < 50m ? (v gs = 2.5v) general description the AO4800 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 alpha & omega semiconductor, ltd.
AO4800 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.4 v i d(on) 25 a 22.6 27 t j =125c 33 40 27 32 m ? 42 50 m ? g fs 12 16 s v sd 0.71 1 v i s 3a c iss 858 pf c oss 110 pf c rss 80 pf r g 1.24 ? q g 9.6 nc q gs 1.65 nc q gd 3nc t d(on) 5.7 ns t r 13 ns t d(off) 37 ns t f 4.2 ns t rr body diode reverse recovery time 15.5 ns q rr body diode reverse recovery charge 7.9 nc turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =15v, i d =6.9a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =6 ? output capacitance reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz r ds(on) static drain-source on-resistance v gs =10v, i d =6.9a m ? v gs =4.5v, i d =6.0a v gs =2.5v, i d =5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v i f =5a, di/dt=100a/ s i f =5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO4800 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5 v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current an d gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.00 0.25 0.50 0.75 1.00 1.25 1.50 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 c v ds =5v v gs =2.5v v gs =4.5 v v gs =10v i d =5a 125c 25c 25c i d =5a alpha & omega semiconductor, ltd.
AO4800 typical electrical and thermal characteristics 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1 s 10s d c r ds(on) limite d t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v alpha & omega semiconductor, ltd.
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.100 mm (4 mil) unless otherwise specified 3. coplanarity : 0.1000 mm 4. dimension l is measured in gage plane recommended land pattern package marking description note: lg - aos logo partn - part number code. f - fab location a - assembly location y - year code w - week code. l n - assembly lot code so-8 part no. code part no. ao4400 ao4401 code 4401 4400 4800 code AO4800 ao4801 part no. 4801 4700 code ao4700 ao4701 part no. 4701 unit: mm alpha & omega semiconductor, inc.
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation alpha & omega semiconductor, inc.
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